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  • Ind Chem,

Atomistic Understanding of Silicon Carbide Material Synthesis via ReaxFF Molecular Dynamics Simulation of Chemical Vapor Deposition

Alexey Hasan*
Department of Physics, Montana State University, Bozeman, USA
*Corresponding Author : Alexey Hasan, Department of Physics, Montana State University, Bozeman, USA, Email: alexeyhasan@gmail.com

Received Date: May 01, 2024 / Accepted Date: May 30, 2024 / Published Date: May 30, 2024

Abstract

Chemical vapor deposition (CVD) is a crucial method for synthesizing silicon carbide (SiC) materials with tailored properties for various applications. Understanding the atomistic processes involved in SiC material synthesis is essential for optimizing synthesis conditions and tailoring material properties. ReaxFF molecular dynamics (MD) simulation has emerged as a powerful tool for gaining atomistic insights into complex chemical reactions occurring during CVD processes. In this study, we explore the atomistic understanding of SiC material synthesis via ReaxFFMD simulation of CVD. We discuss the principles of ReaxFF-MD simulation, its applications in SiC CVD, advantages, challenges, and future directions. By providing detailed insights into reaction mechanisms, kinetics, and structureproperty relationships, ReaxFF-MD simulation can guide experimental efforts and facilitate the design and optimization of SiC CVD processes.

Citation: Michal K (2024) Atomistic Understanding of Silicon Carbide Material Synthesis via ReaxFF Molecular Dynamics Simulation of Chemical Vapor Deposition. Ind Chem, 10: 288.

Copyright: © 2024 Michal K. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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