Research Article
Studies on Different Doped Zn Concentrations of CdSe Thin Films
Rani S1, Shanthi J2, Kashif M3, Ayeshamariam A4* and Jayachandran M51Research Scholar, Bharathiar University, Coimbatore, Tamilnadu, India-641046
2Department of Physics, Avinashilingam University, Coimbatore, Tamilnadu, India-641043
3Department of Electrical and Electronic Engineering, Faculty of Engineering, Universiti Malayaia Sarawak 94300, Kota Samarahan Sarawak, Malaysia
4Department of Physics, Khadir Mohideen College, Adirampattinam, 614 701, India
5Department of Physics, Sree Sevugan Annamalai College, Devakottai, 630303, India
- *Corresponding Author:
- Ayeshamariam A
Department of Physics
Khadir Mohideen College
Adirampattinam, 614 701, India
Tel: 9443619470
Fax: +91-4565-227713
E-mail: aismma786@gmail.com
Received Date: June 21, 2016; Accepted Date: July 22, 2016; Published Date: July 30, 2016
Citation: Rani S, Shanthi J, Kashif M, Ayeshamariam A, Jayachandran M (2016) Studies on Different Doped Zn Concentrations of CdSe Thin Films. J Powder Metall Min 5:143. doi:10.4172/2168-9806.1000143
Copyright: © 2016 Rani S, et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
Abstract
Different Zn concentration was doped with CdSe thin films by Electron Beam Evaporation method. Crystallite variation was studied for doping effect and it was found to be about 40 to 50 nm respectively. Optical band gap values are found to be modified by doping as well as annealing. Annealed films showed considerable influence in their optoelctronic and structural properties, which provided improvement in conversion efficiency of about 2.75% and 2.87% respectively.
